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IRFHM8363TR2PBF
manufacturer:
Infineon Technologies
Description:
MOSFET 2N-CH 30V 11A 8PQFN
Category:
Semiconductors
Specifications
Supplier Device Package ::
8-PQFN (3.3x3.3), Power33
Product Category ::
MOSFET
Factory Stock ::
0
Minimum Quantity ::
1
Input Capacitance (Ciss) (Max) @ Vds ::
1165pF @ 10V
Package / Case ::
8-PowerVDFN
Part Status ::
Obsolete
Current - Continuous Drain (Id) @ 25°C ::
11A
Packaging ::
Cut Tape (CT)
@ Qty ::
0
Operating Temperature ::
-55°C ~ 150°C (TJ)
FET Type ::
2 N-Channel (Dual)
FET Feature ::
Logic Level Gate
Drain To Source Voltage (Vdss) ::
30V
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
15nC @ 10V
Rds On (Max) @ Id, Vgs ::
14.9 MOhm @ 10A, 10V
Power - Max ::
2.7W
Vgs(th) (Max) @ Id ::
2.35V @ 25µA
Series ::
HEXFET®
Manufacturer ::
Infineon Technologies
Model Number:
IRFHM8363TR2PBF
Introduction
The IRFHM8363TR2PBF,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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