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SUM90P10-19L-E3
manufacturer:
Siliconix / Vishay
Description:
MOSFET 100V 90A 375W 19mohm @ 10V
Category:
Semiconductors
Specifications
Transistor Polarity ::
P-Channel
Product Category ::
MOSFET
Typical Turn-On Delay Time ::
20 Ns
Pd-power Dissipation ::
375 W
Vgs-gate-source Voltage ::
-20 V, + 20 V
Minimum Working Temperature ::
-55 C
Package ::
Reel
Trade Name ::
TrenchFET
Fall Time ::
870 Ns
Manufacturer ::
Siliconix / Vishay
Factory Packing Quantity ::
800
Typical Turn-Off Delay Time ::
145 Ns
Configuration ::
Single
Product Type ::
MOSFET
Forward Transconductance-minimum ::
80 S
Maximum Working Temperature ::
+ 175 C
Rise Time ::
510 Ns
Number Of Channels ::
1 Channel
Trademark ::
Vishay Semiconductors
Qg-gate Charge ::
217 NC
Id-continuous Drain Current ::
90 A
Transistor Type ::
1 P-Channel
Installation Style ::
SMD/SMT
Package / Box ::
TO-263-3
Channel Mode ::
Enhancement
Technology ::
Si
Vds-Drain-source Breakdown Voltage ::
100 V
Series ::
SUM
Rds On-Drain-source On Resistance ::
19 MOhms
Vgs Th- Gate-source Threshold Voltage ::
1 V
Model Number:
SUM90P10-19L-E3
Introduction
The SUM90P10-19L-E3,from Siliconix / Vishay,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
SUP85N02-03-E3 |
MOSFET 20V 85A 250W
|
|
|
|
SQM120P04-04L-GE3 |
MOSFET P-Channel 40V Automotive MOSFET
|
|
|
|
SQ3481EV-T1-GE3 |
MOSFET P-Channel 30V Automotive MOSFET
|
|
|
|
SI5402DC-T3 |
MOSFET 30V 6.7A 2.5W 35mohm @ 10V
|
|
|
|
VQ1004P-2 |
MOSFET QSB14LD VNDQ06
|
|
|
|
2N6660JTXP02 |
MOSFET 19500/547 JANTX2N6660P w/ Pind
|
|
|
|
VQ1001P-2 |
MOSFET MOSPOWER TRANSISTOR
|
|
|
|
IRLU024 |
MOSFET N-Chan 60V 14 Amp
|
|
|
|
SIHG22N60S-E3 |
MOSFET 600V N-Channel Superjunction TO-247
|
|
|
|
SI6441DQ-T1-GE3 |
MOSFET 30V 8.0A 1.75W 15mohm @ 10V
|
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