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ZXMN6A08E6QTA
manufacturer:
Diodes Incorporated
Description:
MOSFET 60V N-Ch Enh FET 20Vgs 80mOhm
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Technology ::
Si
Id - Continuous Drain Current ::
2.5 A
Mounting Style ::
SMD/SMT
Minimum Operating Temperature ::
- 55 C
Package / Case ::
SOT-26-6
Maximum Operating Temperature ::
+ 150 C
Channel Mode ::
Enhancement
Vds - Drain-Source Breakdown Voltage ::
60 V
Packaging ::
Reel
Vgs Th - Gate-Source Threshold Voltage ::
1 V
Product Category ::
MOSFET
Rds On - Drain-Source Resistance ::
150 MOhms
Number Of Channels ::
1 Channel
Vgs - Gate-Source Voltage ::
20 V
Qg - Gate Charge ::
5.8 NC
Manufacturer ::
Diodes Incorporated
Model Number:
ZXMN6A08E6QTA
Introduction
The ZXMN6A08E6QTA,from Diodes Incorporated,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
DMN3005LK3-13 |
MOSFET N-Ch FET VDSS 30V VGSS 20V PD 1.68W
|
|
|
|
DMT6009LFG-13 |
MOSFET 60V N-Ch Enh FET Low Rdson
|
|
|
|
DMTH6004SK3Q-13 |
MOSFET MOSFET BVDSS: 41V-60V
|
|
|
|
DMPH3010LK3Q-13 |
MOSFET MOSFET BVDSS: 25V~30V TO252 T&R 2.5K
|
|
|
|
DMP2035UFDF-13 |
MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 10K
|
|
|
|
DMN3023L-13 |
MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss 51A
|
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