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ZXMP10A13FQTA
manufacturer:
Diodes Incorporated
Description:
MOSFET 100V P-Ch Enh FET 20Vgs -0.5A ID 625mW
Category:
Semiconductors
Specifications
Transistor Polarity ::
P-Channel
Technology ::
Si
Id - Continuous Drain Current ::
- 500 MA
Mounting Style ::
SMD/SMT
Minimum Operating Temperature ::
- 55 C
Package / Case ::
SOT-23-3
Maximum Operating Temperature ::
+ 150 C
Channel Mode ::
Enhancement
Vds - Drain-Source Breakdown Voltage ::
- 100 V
Packaging ::
Reel
Vgs Th - Gate-Source Threshold Voltage ::
- 4 V
Product Category ::
MOSFET
Rds On - Drain-Source Resistance ::
1.45 Ohms
Number Of Channels ::
1 Channel
Vgs - Gate-Source Voltage ::
+/- 20 V
Qg - Gate Charge ::
1.8 NC
Manufacturer ::
Diodes Incorporated
Model Number:
ZXMP10A13FQTA
Introduction
The ZXMP10A13FQTA,from Diodes Incorporated,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
DMN3005LK3-13 |
MOSFET N-Ch FET VDSS 30V VGSS 20V PD 1.68W
|
|
|
|
DMT6009LFG-13 |
MOSFET 60V N-Ch Enh FET Low Rdson
|
|
|
|
DMTH6004SK3Q-13 |
MOSFET MOSFET BVDSS: 41V-60V
|
|
|
|
DMPH3010LK3Q-13 |
MOSFET MOSFET BVDSS: 25V~30V TO252 T&R 2.5K
|
|
|
|
DMP2035UFDF-13 |
MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 10K
|
|
|
|
DMN3023L-13 |
MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss 51A
|
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