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TK39J60W,S1VQ
manufacturer:
Toshiba
Description:
MOSFET N-Ch 38.8A 270W FET 600V 4100pF 110nC
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Technology ::
Si
Product Category ::
MOSFET
Mounting Style ::
Through Hole
Package / Case ::
TO-3PN-3
Vds - Drain-Source Breakdown Voltage ::
600 V
Packaging ::
Reel
Id - Continuous Drain Current ::
38.8 A
Rds On - Drain-Source Resistance ::
65 MOhms
Number Of Channels ::
1 Channel
Vgs - Gate-Source Voltage ::
10 V
Qg - Gate Charge ::
135 NC
Manufacturer ::
Toshiba
Model Number:
TK39J60W,S1VQ
Introduction
The TK39J60W,S1VQ,from Toshiba,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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