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SCT10N120
manufacturer:
STMicroelectronics
Description:
MOSFET Silicon carbide Power MOSFET 1200 V, 10 A, 550 mOhm (typ., TJ = 150 C) in an HiP247 package
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Technology ::
SiC
Id - Continuous Drain Current ::
12 A
Mounting Style ::
Through Hole
Minimum Operating Temperature ::
- 55 C
Package / Case ::
HiP247-3
Maximum Operating Temperature ::
+ 200 C
Channel Mode ::
Enhancement
Vds - Drain-Source Breakdown Voltage ::
1.2 KV
Packaging ::
Tube
Vgs Th - Gate-Source Threshold Voltage ::
1.8 V
Product Category ::
MOSFET
Rds On - Drain-Source Resistance ::
500 MOhms
Number Of Channels ::
1 Channel
Vgs - Gate-Source Voltage ::
- 10 V To + 25 V
Qg - Gate Charge ::
22 NC
Manufacturer ::
STMicroelectronics
Model Number:
SCT10N120
Introduction
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