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DMN2013UFX-7
manufacturer:
Diodes Incorporated
Description:
MOSFET 20V N-Ch Enh Mode 8Vgss 10A 0.78W
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Technology ::
Si
Id - Continuous Drain Current ::
10 A
Mounting Style ::
SMD/SMT
Minimum Operating Temperature ::
- 55 C
Package / Case ::
W-DFN5020-6
Maximum Operating Temperature ::
+ 150 C
Channel Mode ::
Enhancement
Vds - Drain-Source Breakdown Voltage ::
20 V
Packaging ::
Reel
Vgs Th - Gate-Source Threshold Voltage ::
1.1 V
Product Category ::
MOSFET
Rds On - Drain-Source Resistance ::
9.6 MOhms
Number Of Channels ::
2 Channel
Vgs - Gate-Source Voltage ::
8 V
Qg - Gate Charge ::
57.4 NC
Manufacturer ::
Diodes Incorporated
Model Number:
DMN2013UFX-7
Introduction
The DMN2013UFX-7,from Diodes Incorporated,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
DMN3005LK3-13 |
MOSFET N-Ch FET VDSS 30V VGSS 20V PD 1.68W
|
|
|
|
DMT6009LFG-13 |
MOSFET 60V N-Ch Enh FET Low Rdson
|
|
|
|
DMTH6004SK3Q-13 |
MOSFET MOSFET BVDSS: 41V-60V
|
|
|
|
DMPH3010LK3Q-13 |
MOSFET MOSFET BVDSS: 25V~30V TO252 T&R 2.5K
|
|
|
|
DMP2035UFDF-13 |
MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 10K
|
|
|
|
DMN3023L-13 |
MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss 51A
|
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