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IPW60R037CSFD
manufacturer:
Infineon Technologies
Description:
HIGH POWER_NEW
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Product Category ::
MOSFET
Typical Turn-On Delay Time ::
53 Ns
Subcategory ::
MOSFETs
Pd-power Dissipation ::
245 W
Vgs-gate-source Voltage ::
-20 V, + 20 V
Minimum Working Temperature ::
-55 C
Package ::
Tube
Fall Time ::
6 Ns
Manufacturer ::
Infineon Technologies
Factory Packing Quantity ::
240
Typical Turn-Off Delay Time ::
196 Ns
Configuration ::
Single
Product Type ::
MOSFET
Maximum Working Temperature ::
+ 150 C
Rise Time ::
30 Ns
Number Of Channels ::
1 Channel
Trademark ::
Infineon Technologies
Qg-gate Charge ::
136 NC
Id-continuous Drain Current ::
54 A
Transistor Type ::
1 N-Channel
Installation Style ::
Through Hole
Package / Box ::
TO-247-3
Channel Mode ::
Enhancement
Technology ::
Si
Vds-Drain-source Breakdown Voltage ::
650 V
Rds On-Drain-source On Resistance ::
37 MOhms
Vgs Th- Gate-source Threshold Voltage ::
3.5 V
Model Number:
IPW60R037CSFD
Introduction
The IPW60R037CSFD,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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