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BUZ30AH3045AATMA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 200V 21A TO-263
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
±20V
Current - Continuous Drain (Id) @ 25°C ::
21A (Tc)
@ Qty ::
0
FET Type ::
N-Channel
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
-
Manufacturer ::
Infineon Technologies
Minimum Quantity ::
1000
Drive Voltage (Max Rds On, Min Rds On) ::
10V
Factory Stock ::
0
Operating Temperature ::
-55°C ~ 150°C (TJ)
FET Feature ::
-
Series ::
SIPMOS®
Input Capacitance (Ciss) (Max) @ Vds ::
1900pF @ 25V
Supplier Device Package ::
D²PAK (TO-263AB)
Part Status ::
Not For New Designs
Packaging ::
Tape & Reel (TR)
Rds On (Max) @ Id, Vgs ::
130 MOhm @ 13.5A, 10V
Power Dissipation (Max) ::
125W (Tc)
Package / Case ::
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
4V @ 1mA
Drain To Source Voltage (Vdss) ::
200V
Model Number:
BUZ30AH3045AATMA1
Introduction
The BUZ30AH3045AATMA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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