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IPS65R1K0CEAKMA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 650V 4.3A TO-251-3
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
±20V
Current - Continuous Drain (Id) @ 25°C ::
4.3A (Tc)
@ Qty ::
0
FET Type ::
N-Channel
Mounting Type ::
Through Hole
Gate Charge (Qg) (Max) @ Vgs ::
15.3nC @ 10V
Manufacturer ::
Infineon Technologies
Minimum Quantity ::
1500
Drive Voltage (Max Rds On, Min Rds On) ::
10V
Factory Stock ::
0
Operating Temperature ::
-40°C ~ 150°C (TJ)
FET Feature ::
-
Series ::
CoolMOS™ CE
Input Capacitance (Ciss) (Max) @ Vds ::
328pF @ 100V
Supplier Device Package ::
TO-251
Part Status ::
Not For New Designs
Packaging ::
Tube
Rds On (Max) @ Id, Vgs ::
1 Ohm @ 1.5A, 10V
Power Dissipation (Max) ::
37W (Tc)
Package / Case ::
TO-251-3 Stub Leads, IPak
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
3.5V @ 200µA
Drain To Source Voltage (Vdss) ::
650V
Model Number:
IPS65R1K0CEAKMA1
Introduction
The IPS65R1K0CEAKMA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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