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IGT60R190D1SATMA1
manufacturer:
Infineon Technologies
Description:
IC GAN FET 600V 23A 8HSOF
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
-
Current - Continuous Drain (Id) @ 25°C ::
-
@ Qty ::
0
FET Type ::
-
Mounting Type ::
-
Gate Charge (Qg) (Max) @ Vgs ::
-
Manufacturer ::
Infineon Technologies
Minimum Quantity ::
2000
Drive Voltage (Max Rds On, Min Rds On) ::
-
Factory Stock ::
0
Operating Temperature ::
-
FET Feature ::
-
Input Capacitance (Ciss) (Max) @ Vds ::
-
Supplier Device Package ::
-
Part Status ::
Active
Packaging ::
-
Rds On (Max) @ Id, Vgs ::
-
Power Dissipation (Max) ::
-
Package / Case ::
-
Technology ::
-
Vgs(th) (Max) @ Id ::
-
Drain To Source Voltage (Vdss) ::
-
Model Number:
IGT60R190D1SATMA1
Introduction
The IGT60R190D1SATMA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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