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ZXMN3B04N8TA
manufacturer:
Diodes Incorporated
Description:
MOSFET N-CH 30V 8.9A 8-SOIC
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
±12V
Current - Continuous Drain (Id) @ 25°C ::
7.2A (Ta)
@ Qty ::
0
FET Type ::
N-Channel
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
23.1nC @ 4.5V
Manufacturer ::
Diodes Incorporated
Minimum Quantity ::
500
Drive Voltage (Max Rds On, Min Rds On) ::
2.5V, 4.5V
Factory Stock ::
15000
Operating Temperature ::
-55°C ~ 150°C (TJ)
FET Feature ::
-
Series ::
-
Input Capacitance (Ciss) (Max) @ Vds ::
2480pF @ 15V
Supplier Device Package ::
8-SO
Part Status ::
Active
Packaging ::
Tape & Reel (TR)
Rds On (Max) @ Id, Vgs ::
25 MOhm @ 7.2A, 4.5V
Power Dissipation (Max) ::
2W (Ta)
Package / Case ::
8-SOIC (0.154", 3.90mm Width)
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
700mV @ 250µA
Drain To Source Voltage (Vdss) ::
30V
Model Number:
ZXMN3B04N8TA
Introduction
The ZXMN3B04N8TA,from Diodes Incorporated,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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