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ZXMN10B08E6TA
manufacturer:
Diodes Incorporated
Description:
MOSFET N-CH 100V 1.6A SOT23-6
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
±20V
Current - Continuous Drain (Id) @ 25°C ::
1.6A (Ta)
@ Qty ::
0
FET Type ::
N-Channel
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
9.2nC @ 10V
Manufacturer ::
Diodes Incorporated
Minimum Quantity ::
3000
Drive Voltage (Max Rds On, Min Rds On) ::
4.3V, 10V
Factory Stock ::
0
Operating Temperature ::
-55°C ~ 150°C (TJ)
FET Feature ::
-
Series ::
-
Input Capacitance (Ciss) (Max) @ Vds ::
497pF @ 50V
Supplier Device Package ::
SOT-26
Part Status ::
Active
Packaging ::
Tape & Reel (TR)
Rds On (Max) @ Id, Vgs ::
230 MOhm @ 1.6A, 10V
Power Dissipation (Max) ::
1.1W (Ta)
Package / Case ::
SOT-23-6
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
3V @ 250µA
Drain To Source Voltage (Vdss) ::
100V
Model Number:
ZXMN10B08E6TA
Introduction
The ZXMN10B08E6TA,from Diodes Incorporated,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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