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DMN2013UFX-7

manufacturer:
Diodes Incorporated
Description:
MOSFET 2N-CH 20V 10A 6-DFN
Category:
Semiconductors
Specifications
Supplier Device Package ::
W-DFN5020-6
Product Category ::
MOSFET
Factory Stock ::
0
Minimum Quantity ::
3000
Input Capacitance (Ciss) (Max) @ Vds ::
2607pF @ 10V
Package / Case ::
6-VFDFN Exposed Pad
Part Status ::
Active
Current - Continuous Drain (Id) @ 25°C ::
10A (Ta)
Packaging ::
Tape & Reel (TR)
@ Qty ::
0
Operating Temperature ::
-55°C ~ 150°C (TJ)
FET Type ::
2 N-Channel (Dual) Common Drain
FET Feature ::
Standard
Drain To Source Voltage (Vdss) ::
20V
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
57.4nC @ 8V
Rds On (Max) @ Id, Vgs ::
11.5 MOhm @ 8.5A, 4.5V
Power - Max ::
2.14W
Vgs(th) (Max) @ Id ::
1.1V @ 250µA
Series ::
Automotive, AEC-Q101
Manufacturer ::
Diodes Incorporated
Model Number:
DMN2013UFX-7
Introduction
The DMN2013UFX-7,from Diodes Incorporated,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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