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BSG0811ND
manufacturer:
Infineon Technologies
Description:
MOSFET DIFFERENTIATED MOSFETS
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Technology ::
Si
Id - Continuous Drain Current ::
50 A, 50 A
Mounting Style ::
SMD/SMT
Minimum Operating Temperature ::
- 55 C
Package / Case ::
TISON-8
Maximum Operating Temperature ::
+ 150 C
Channel Mode ::
Enhancement
Vds - Drain-Source Breakdown Voltage ::
25 V, 25 V
Packaging ::
Reel
Vgs Th - Gate-Source Threshold Voltage ::
1.2 V, 1.2 V
Product Category ::
MOSFET
Rds On - Drain-Source Resistance ::
2.4 MOhms, 700 UOhms
Number Of Channels ::
2 Channel
Vgs - Gate-Source Voltage ::
16 V, 16 V
Qg - Gate Charge ::
8.4 NC, 29 NC
Manufacturer ::
Infineon Technologies
Model Number:
BSG0811ND
Introduction
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