english
FCI25N60N_F102
manufacturer:
Fairchild Semiconductor
Description:
MOSFET 600V N-CHAN SupreMOS
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Technology ::
Si
Product Category ::
MOSFET
Mounting Style ::
Through Hole
Package / Case ::
TO-262-3
Vds - Drain-Source Breakdown Voltage ::
600 V
Packaging ::
Tube
Id - Continuous Drain Current ::
25 A
Number Of Channels ::
1 Channel
Rds On - Drain-Source Resistance ::
107 MOhms
Manufacturer ::
Fairchild Semiconductor
Model Number:
FCI25N60N_F102
Introduction
The FCI25N60N_F102,from Fairchild Semiconductor,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Related Products
FCH023N65S3_F155
MOSFET SuperFET3 650V 23 mOhm
FDC021N30
MOSFET 30V/20V NChnl Power Trench MOSFET
FDWS86368_F085
MOSFET 80V N-Chnl Power Trench MOSFET
FCPF150N65F
MOSFET SuperFET2 150 mOhm 650V FRFET
FDMC2D8N025S
MOSFET N-ChannelPowerTrench MOSFET,PwrClip 33Sin
FCA20N60S_F109
MOSFET 650V, SUPER FET
FDFMA2P853T
MOSFET MOSFET/Schottky -20V Int. PCh PowerTrench
FDD6796A
MOSFET 25V 40A N-Channel PowerTrench
FDPF9N50NZ
MOSFET N-CH UNIFET2 SINGLE GAGE 500V
FDMS2506SDC
MOSFET 25V N-Chan Dual Cool PowerTrench SyncFET
| Image | Part # | Description | |
|---|---|---|---|
|
|
FCH023N65S3_F155 |
MOSFET SuperFET3 650V 23 mOhm
|
|
|
|
FDC021N30 |
MOSFET 30V/20V NChnl Power Trench MOSFET
|
|
|
|
FDWS86368_F085 |
MOSFET 80V N-Chnl Power Trench MOSFET
|
|
|
|
FCPF150N65F |
MOSFET SuperFET2 150 mOhm 650V FRFET
|
|
|
|
FDMC2D8N025S |
MOSFET N-ChannelPowerTrench MOSFET,PwrClip 33Sin
|
|
|
|
FCA20N60S_F109 |
MOSFET 650V, SUPER FET
|
|
|
|
FDFMA2P853T |
MOSFET MOSFET/Schottky -20V Int. PCh PowerTrench
|
|
|
|
FDD6796A |
MOSFET 25V 40A N-Channel PowerTrench
|
|
|
|
FDPF9N50NZ |
MOSFET N-CH UNIFET2 SINGLE GAGE 500V
|
|
|
|
FDMS2506SDC |
MOSFET 25V N-Chan Dual Cool PowerTrench SyncFET
|
Send RFQ
Stock:
MOQ: