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ZXMHC10A07N8TC
manufacturer:
Diodes Incorporated
Description:
MOSFET Mosfet H-Bridge 100/-100 1.1/-0.9
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel, P-Channel
Technology ::
Si
Id - Continuous Drain Current ::
1 A, - 850 MA
Mounting Style ::
SMD/SMT
Minimum Operating Temperature ::
- 55 C
Package / Case ::
SO-8
Maximum Operating Temperature ::
+ 150 C
Channel Mode ::
Enhancement
Vds - Drain-Source Breakdown Voltage ::
100 V, - 100 V
Packaging ::
Reel
Vgs Th - Gate-Source Threshold Voltage ::
2 V
Product Category ::
MOSFET
Rds On - Drain-Source Resistance ::
700 MOhms, 1.45 Ohms
Number Of Channels ::
4 Channel
Vgs - Gate-Source Voltage ::
+/- 20 V, +/- 20 V
Qg - Gate Charge ::
2.9 NC, 3.5 NC
Manufacturer ::
Diodes Incorporated
Model Number:
ZXMHC10A07N8TC
Introduction
The ZXMHC10A07N8TC,from Diodes Incorporated,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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|
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MOSFET N-Ch FET VDSS 30V VGSS 20V PD 1.68W
|
|
|
|
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MOSFET 60V N-Ch Enh FET Low Rdson
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|
DMTH6004SK3Q-13 |
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|
|
|
|
DMPH3010LK3Q-13 |
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|
|
|
|
DMP2035UFDF-13 |
MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 10K
|
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