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Home > Products > > TK10Q60W,S1VQ

TK10Q60W,S1VQ

manufacturer:
Toshiba
Description:
MOSFET N-Ch DTMOSIV 600 V 80W 700pF 20nC 9.7A
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Id - Continuous Drain Current ::
9.7 A
Mounting Style ::
Through Hole
Minimum Operating Temperature ::
- 55 C
Package / Case ::
TO-251-3
Maximum Operating Temperature ::
+ 150 C
Channel Mode ::
Enhancement
Vds - Drain-Source Breakdown Voltage ::
600 V
Technology ::
Si
Vgs Th - Gate-Source Threshold Voltage ::
3.7 V
Product Category ::
MOSFET
Rds On - Drain-Source Resistance ::
327 MOhms
Number Of Channels ::
1 Channel
Vgs - Gate-Source Voltage ::
30 V
Qg - Gate Charge ::
20 NC
Manufacturer ::
Toshiba
Model Number:
TK10Q60W,S1VQ
Introduction
The TK10Q60W,S1VQ,from Toshiba,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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