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BSZ018N04LS6ATMA1
manufacturer:
Infineon Technologies
Description:
MOSFET TRENCH <= 40V
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Packaging ::
Tape & Reel (TR)
Product Category ::
MOSFET
Rise Time ::
1.6 Ns
Pd - Power Dissipation ::
83 W
Vds - Drain-Source Breakdown Voltage ::
40 V
Package ::
TSDSON-FL-8
Vgs Th - Gate-Source Threshold Voltage ::
2.3 V
Id - Continuous Drain Current ::
40 A
Rds On - Drain-Source Resistance ::
2.1 MOhms
Forward Transconductance - Min ::
110 S
RoHS ::
Green Available
Fall Time ::
4 Ns
Number Of Channels ::
1 Channel
Factory Pack Quantity ::
5000
Vgs - Gate-Source Voltage ::
- 20 V, + 20 V
Qg - Gate Charge ::
31 NC
Manufacturer ::
Infineon Technologies
Model Number:
BSZ018N04LS6ATMA1
Introduction
The BSZ018N04LS6ATMA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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