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2N6766
manufacturer:
IR / Infineon
Description:
MOSFET N-CH 200V TO-204AE TO-3
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
±20V
Current - Continuous Drain (Id) @ 25°C ::
30A (Tc)
@ Qty ::
0
FET Type ::
N-Channel
Mounting Type ::
Through Hole
Gate Charge (Qg) (Max) @ Vgs ::
115nC @ 10V
Manufacturer ::
IR / Infineon
Minimum Quantity ::
455
Drive Voltage (Max Rds On, Min Rds On) ::
10V
Factory Stock ::
0
Operating Temperature ::
-55°C ~ 150°C (TJ)
FET Feature ::
-
Series ::
-
Input Capacitance (Ciss) (Max) @ Vds ::
-
Supplier Device Package ::
TO-3
Part Status ::
Obsolete
Packaging ::
Bulk
Rds On (Max) @ Id, Vgs ::
90 MOhm @ 30A, 10V
Power Dissipation (Max) ::
4W (Ta), 150W (Tc)
Package / Case ::
TO-204AE
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
4V @ 250µA
Drain To Source Voltage (Vdss) ::
200V
Model Number:
2N6766
Introduction
The 2N6766,from IR / Infineon,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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