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IPD50R950CEBTMA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 500V 4.3A PG-TO252
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
±20V
Current - Continuous Drain (Id) @ 25°C ::
4.3A (Tc)
@ Qty ::
0
FET Type ::
N-Channel
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
10.5nC @ 10V
Manufacturer ::
Infineon Technologies
Minimum Quantity ::
2500
Drive Voltage (Max Rds On, Min Rds On) ::
13V
Factory Stock ::
0
Operating Temperature ::
-55°C ~ 150°C (TJ)
FET Feature ::
Super Junction
Series ::
CoolMOS™
Input Capacitance (Ciss) (Max) @ Vds ::
231pF @ 100V
Supplier Device Package ::
PG-TO252-3
Packaging ::
Tape & Reel (TR)
Rds On (Max) @ Id, Vgs ::
950 MOhm @ 1.2A, 13V
Power Dissipation (Max) ::
34W (Tc)
Package / Case ::
TO-252-3, DPak (2 Leads + Tab), SC-63
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
3.5V @ 100µA
Drain To Source Voltage (Vdss) ::
500V
Model Number:
IPD50R950CEBTMA1
Introduction
The IPD50R950CEBTMA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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