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IPB049N06L3GATMA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 60V 80A TO263-3
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
±20V
Current - Continuous Drain (Id) @ 25°C ::
80A (Tc)
@ Qty ::
0
FET Type ::
N-Channel
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
50nC @ 4.5V
Manufacturer ::
Infineon Technologies
Minimum Quantity ::
1000
Drive Voltage (Max Rds On, Min Rds On) ::
4.5V, 10V
Factory Stock ::
0
Operating Temperature ::
-55°C ~ 175°C (TJ)
FET Feature ::
-
Series ::
OptiMOS™
Input Capacitance (Ciss) (Max) @ Vds ::
8400pF @ 30V
Supplier Device Package ::
D²PAK (TO-263AB)
Part Status ::
Obsolete
Packaging ::
Tape & Reel (TR)
Rds On (Max) @ Id, Vgs ::
4.7 MOhm @ 80A, 10V
Power Dissipation (Max) ::
115W (Tc)
Package / Case ::
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
2.2V @ 58µA
Drain To Source Voltage (Vdss) ::
60V
Model Number:
IPB049N06L3GATMA1
Introduction
The IPB049N06L3GATMA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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