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IRF7464PBF
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 200V 1.2A 8-SOIC
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
±30V
Current - Continuous Drain (Id) @ 25°C ::
1.2A (Ta)
@ Qty ::
0
FET Type ::
N-Channel
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
14nC @ 10V
Manufacturer ::
Infineon Technologies
Minimum Quantity ::
4085
Drive Voltage (Max Rds On, Min Rds On) ::
10V
Factory Stock ::
0
Operating Temperature ::
-55°C ~ 150°C (TJ)
FET Feature ::
-
Series ::
HEXFET®
Input Capacitance (Ciss) (Max) @ Vds ::
280pF @ 25V
Supplier Device Package ::
8-SO
Part Status ::
Obsolete
Packaging ::
Tube
Rds On (Max) @ Id, Vgs ::
730 MOhm @ 720mA, 10V
Power Dissipation (Max) ::
2.5W (Ta)
Package / Case ::
8-SOIC (0.154", 3.90mm Width)
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
5.5V @ 250µA
Drain To Source Voltage (Vdss) ::
200V
Model Number:
IRF7464PBF
Introduction
The IRF7464PBF,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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