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STB7ANM60N
manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 600V DPAK
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
±25V
Current - Continuous Drain (Id) @ 25°C ::
5A (Tc)
@ Qty ::
0
FET Type ::
N-Channel
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
14nC @ 10V
Manufacturer ::
STMicroelectronics
Minimum Quantity ::
1000
Drive Voltage (Max Rds On, Min Rds On) ::
10V
Factory Stock ::
0
Operating Temperature ::
150°C (TJ)
FET Feature ::
-
Series ::
Automotive, AEC-Q101, MDmesh™ II
Input Capacitance (Ciss) (Max) @ Vds ::
363pF @ 50V
Supplier Device Package ::
D2PAK
Part Status ::
Active
Packaging ::
Tape & Reel (TR)
Rds On (Max) @ Id, Vgs ::
900 MOhm @ 2.5A, 10V
Power Dissipation (Max) ::
45W (Tc)
Package / Case ::
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
4V @ 250mA
Drain To Source Voltage (Vdss) ::
600V
Model Number:
STB7ANM60N
Introduction
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