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IPT111N20NFDATMA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 200V 96A HSOF-8
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
±20V
Current - Continuous Drain (Id) @ 25°C ::
96A (Tc)
@ Qty ::
0
FET Type ::
N-Channel
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
87nC @ 10V
Manufacturer ::
Infineon Technologies
Minimum Quantity ::
2000
Drive Voltage (Max Rds On, Min Rds On) ::
10V
Factory Stock ::
0
Operating Temperature ::
-55°C ~ 175°C (TJ)
FET Feature ::
-
Series ::
OptiMOS™
Input Capacitance (Ciss) (Max) @ Vds ::
7000pF @ 100V
Supplier Device Package ::
PG-HSOF-8
Part Status ::
Active
Packaging ::
Tape & Reel (TR)
Rds On (Max) @ Id, Vgs ::
11.1 MOhm @ 96A, 10V
Power Dissipation (Max) ::
375W (Tc)
Package / Case ::
8-PowerSFN
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
4V @ 267µA
Drain To Source Voltage (Vdss) ::
200V
Model Number:
IPT111N20NFDATMA1
Introduction
The IPT111N20NFDATMA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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