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IPDD60R080G7XTMA1
manufacturer:
Infineon Technologies
Description:
MOSFET NCH 650V 83A PG-HDSOP-10
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
±20V
Current - Continuous Drain (Id) @ 25°C ::
29A (Tc)
@ Qty ::
0
FET Type ::
N-Channel
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
42nC @ 10V
Manufacturer ::
Infineon Technologies
Minimum Quantity ::
1700
Drive Voltage (Max Rds On, Min Rds On) ::
10V
Factory Stock ::
0
Operating Temperature ::
-55°C ~ 150°C (TJ)
FET Feature ::
-
Series ::
CoolMOS™ G7
Input Capacitance (Ciss) (Max) @ Vds ::
1640pF @ 400V
Supplier Device Package ::
PG-HDSOP-10-1
Part Status ::
Active
Packaging ::
Tape & Reel (TR)
Rds On (Max) @ Id, Vgs ::
80 MOhm @ 9.7A, 10V
Power Dissipation (Max) ::
174W (Tc)
Package / Case ::
10-PowerSOP Module
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
4V @ 490µA
Drain To Source Voltage (Vdss) ::
600V
Model Number:
IPDD60R080G7XTMA1
Introduction
The IPDD60R080G7XTMA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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