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SCT10N120
manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 1.2KV TO247-3
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
+25V, -10V
Current - Continuous Drain (Id) @ 25°C ::
12A (Tc)
@ Qty ::
0
FET Type ::
N-Channel
Mounting Type ::
Through Hole
Gate Charge (Qg) (Max) @ Vgs ::
22nC @ 20V
Manufacturer ::
STMicroelectronics
Minimum Quantity ::
1
Drive Voltage (Max Rds On, Min Rds On) ::
20V
Factory Stock ::
0
Operating Temperature ::
-55°C ~ 200°C (TJ)
FET Feature ::
-
Series ::
-
Input Capacitance (Ciss) (Max) @ Vds ::
290pF @ 400V
Supplier Device Package ::
HiP247™
Part Status ::
Active
Packaging ::
Tube
Rds On (Max) @ Id, Vgs ::
690 MOhm @ 6A, 20V
Power Dissipation (Max) ::
150W (Tc)
Package / Case ::
TO-247-3
Technology ::
SiCFET (Silicon Carbide)
Vgs(th) (Max) @ Id ::
3.5V @ 250µA
Drain To Source Voltage (Vdss) ::
1200V
Model Number:
SCT10N120
Introduction
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