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DMN10H120SE-13

manufacturer:
Diodes Incorporated
Description:
MOSFET N-CH 100V 3.6A SOT223
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
±20V
Current - Continuous Drain (Id) @ 25°C ::
3.6A (Ta)
@ Qty ::
0
FET Type ::
N-Channel
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
10nC @ 10V
Manufacturer ::
Diodes Incorporated
Minimum Quantity ::
2500
Drive Voltage (Max Rds On, Min Rds On) ::
6V, 10V
Factory Stock ::
0
Operating Temperature ::
-55°C ~ 150°C (TJ)
FET Feature ::
-
Series ::
-
Input Capacitance (Ciss) (Max) @ Vds ::
549pF @ 50V
Supplier Device Package ::
SOT-223
Part Status ::
Active
Packaging ::
Tape & Reel (TR)
Rds On (Max) @ Id, Vgs ::
110 MOhm @ 3.3A, 10V
Power Dissipation (Max) ::
1.3W (Ta)
Package / Case ::
TO-261-4, TO-261AA
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
3V @ 250µA
Drain To Source Voltage (Vdss) ::
100V
Model Number:
DMN10H120SE-13
Introduction
The DMN10H120SE-13,from Diodes Incorporated,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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