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ZXMN6A09DN8TA
manufacturer:
Diodes Incorporated
Description:
MOSFET 2N-CH 60V 4.3A 8-SOIC
Category:
Semiconductors
Specifications
Supplier Device Package ::
8-SO
Product Category ::
MOSFET
Factory Stock ::
0
Minimum Quantity ::
500
Input Capacitance (Ciss) (Max) @ Vds ::
1407pF @ 40V
Package / Case ::
8-SOIC (0.154", 3.90mm Width)
Part Status ::
Active
Current - Continuous Drain (Id) @ 25°C ::
4.3A
Packaging ::
Tape & Reel (TR)
@ Qty ::
0
Operating Temperature ::
-55°C ~ 150°C (TJ)
FET Type ::
2 N-Channel (Dual)
FET Feature ::
Logic Level Gate
Drain To Source Voltage (Vdss) ::
60V
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
24.2nC @ 5V
Rds On (Max) @ Id, Vgs ::
40 MOhm @ 8.2A, 10V
Power - Max ::
1.25W
Vgs(th) (Max) @ Id ::
3V @ 250µA
Series ::
-
Manufacturer ::
Diodes Incorporated
Model Number:
ZXMN6A09DN8TA
Introduction
The ZXMN6A09DN8TA,from Diodes Incorporated,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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|
DMN3005LK3-13 |
MOSFET N-Ch FET VDSS 30V VGSS 20V PD 1.68W
|
|
|
|
DMT6009LFG-13 |
MOSFET 60V N-Ch Enh FET Low Rdson
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|
DMTH6004SK3Q-13 |
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|
|
|
|
DMPH3010LK3Q-13 |
MOSFET MOSFET BVDSS: 25V~30V TO252 T&R 2.5K
|
|
|
|
DMP2035UFDF-13 |
MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 10K
|
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