TPS1120DR
Specifications
Supplier Device Package ::
8-SOIC
Product Category ::
MOSFET
Factory Stock ::
0
Minimum Quantity ::
2500
Input Capacitance (Ciss) (Max) @ Vds ::
-
Package / Case ::
8-SOIC (0.154", 3.90mm Width)
Part Status ::
Active
Current - Continuous Drain (Id) @ 25°C ::
1.17A
Packaging ::
Tape & Reel (TR)
@ Qty ::
0
Operating Temperature ::
-40°C ~ 150°C (TJ)
FET Type ::
2 P-Channel (Dual)
FET Feature ::
Logic Level Gate
Drain To Source Voltage (Vdss) ::
15V
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
5.45nC @ 10V
Rds On (Max) @ Id, Vgs ::
180 MOhm @ 1.5A, 10V
Power - Max ::
840mW
Vgs(th) (Max) @ Id ::
1.5V @ 250µA
Series ::
-
Manufacturer ::
Texas Instruments
Model Number:
TPS1120DR
Introduction
The TPS1120DR,from Texas instruments,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Send RFQ
Stock:
MOQ:

