english
IXFP36N30P3
manufacturer:
IXYS
Description:
MOSFET
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Id - Continuous Drain Current ::
36 A
Mounting Style ::
Through Hole
Tradename ::
HyperFET
Minimum Operating Temperature ::
- 55 C
Package / Case ::
TO-220-3
Maximum Operating Temperature ::
+ 150 C
Channel Mode ::
Enhancement
Vds - Drain-Source Breakdown Voltage ::
300 V
Technology ::
Si
Vgs Th - Gate-Source Threshold Voltage ::
2.5 V
Product Category ::
MOSFET
Rds On - Drain-Source Resistance ::
110 MOhms
Number Of Channels ::
1 Channel
Vgs - Gate-Source Voltage ::
20 V
Qg - Gate Charge ::
30 NC
Manufacturer ::
IXYS
Model Number:
IXFP36N30P3
Introduction
The IXFP36N30P3,from IXYS,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Related Products
IXTN660N04T4
MOSFET 40V/660A TrenchT4 Power MOSFET
IXFR10N100Q
MOSFET MOSFET w/FAST Intrinsic Diode
IXFT4N100Q
MOSFET 4 Amps 1000V 2.8 Rds
IXFR9N80Q
MOSFET 9 Amps 800V
IXFX30N50Q
MOSFET 30 Amps 500V 0.16 Rds
IXFK80N20Q
MOSFET 80 Amps 200V 0.03 Rds
IXFR70N15
MOSFET 67 Amps 150V 0.028 Rds
IXFH60N25Q
MOSFET 60 Amps 250V 0.047 Rds
IXFR90N20
MOSFET 90 Amps 200V 0.025 Rds
IXFX180N085
MOSFET 180 Amps 85V 0.007 Rds
| Image | Part # | Description | |
|---|---|---|---|
|
|
IXTN660N04T4 |
MOSFET 40V/660A TrenchT4 Power MOSFET
|
|
|
|
IXFR10N100Q |
MOSFET MOSFET w/FAST Intrinsic Diode
|
|
|
|
IXFT4N100Q |
MOSFET 4 Amps 1000V 2.8 Rds
|
|
|
|
IXFR9N80Q |
MOSFET 9 Amps 800V
|
|
|
|
IXFX30N50Q |
MOSFET 30 Amps 500V 0.16 Rds
|
|
|
|
IXFK80N20Q |
MOSFET 80 Amps 200V 0.03 Rds
|
|
|
|
IXFR70N15 |
MOSFET 67 Amps 150V 0.028 Rds
|
|
|
|
IXFH60N25Q |
MOSFET 60 Amps 250V 0.047 Rds
|
|
|
|
IXFR90N20 |
MOSFET 90 Amps 200V 0.025 Rds
|
|
|
|
IXFX180N085 |
MOSFET 180 Amps 85V 0.007 Rds
|
Send RFQ
Stock:
MOQ: