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DMG4N65CT
manufacturer:
Diodes Incorporated
Description:
MOSFET N-CH MOSFET 650V 4A
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Technology ::
Si
Id - Continuous Drain Current ::
4 A
Mounting Style ::
Through Hole
Minimum Operating Temperature ::
- 55 C
Package / Case ::
TO-220-3
Maximum Operating Temperature ::
+ 150 C
Channel Mode ::
Enhancement
Vds - Drain-Source Breakdown Voltage ::
650 V
Packaging ::
Tube
Vgs Th - Gate-Source Threshold Voltage ::
3 V
Product Category ::
MOSFET
Rds On - Drain-Source Resistance ::
2.1 Ohms
Number Of Channels ::
1 Channel
Vgs - Gate-Source Voltage ::
30 V
Qg - Gate Charge ::
13.5 NC
Manufacturer ::
Diodes Incorporated
Model Number:
DMG4N65CT
Introduction
The DMG4N65CT,from Diodes Incorporated,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
DMN3005LK3-13 |
MOSFET N-Ch FET VDSS 30V VGSS 20V PD 1.68W
|
|
|
|
DMT6009LFG-13 |
MOSFET 60V N-Ch Enh FET Low Rdson
|
|
|
|
DMTH6004SK3Q-13 |
MOSFET MOSFET BVDSS: 41V-60V
|
|
|
|
DMPH3010LK3Q-13 |
MOSFET MOSFET BVDSS: 25V~30V TO252 T&R 2.5K
|
|
|
|
DMP2035UFDF-13 |
MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 10K
|
|
|
|
DMN3023L-13 |
MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss 51A
|
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