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SCT30N120
manufacturer:
STMicroelectronics
Description:
MOSFET 1200V silicon carbide MOSFET
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Technology ::
SiC
Product Category ::
MOSFET
Mounting Style ::
Through Hole
Minimum Operating Temperature ::
- 55 C
Package / Case ::
HiP247-3
Maximum Operating Temperature ::
+ 200 C
Vds - Drain-Source Breakdown Voltage ::
1.2 KV
Packaging ::
Tube
Vgs Th - Gate-Source Threshold Voltage ::
2.6 V
Id - Continuous Drain Current ::
45 A
Rds On - Drain-Source Resistance ::
80 MOhms
Number Of Channels ::
1 Channel
Vgs - Gate-Source Voltage ::
- 10 V, + 25 V
Qg - Gate Charge ::
105 NC
Manufacturer ::
STMicroelectronics
Model Number:
SCT30N120
Introduction
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