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TK10J80E,S1E
manufacturer:
Toshiba
Description:
MOSFET PLN MOS 800V 1000m (VGS=10V) TO-3PN
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Id - Continuous Drain Current ::
10 A
Mounting Style ::
Through Hole
Minimum Operating Temperature ::
- 55 C
Package / Case ::
TO-3PN-3
Maximum Operating Temperature ::
+ 150 C
Channel Mode ::
Enhancement
Vds - Drain-Source Breakdown Voltage ::
800 V
Technology ::
Si
Vgs Th - Gate-Source Threshold Voltage ::
4 V
Product Category ::
MOSFET
Rds On - Drain-Source Resistance ::
700 MOhms
Number Of Channels ::
1 Channel
Vgs - Gate-Source Voltage ::
30 V
Qg - Gate Charge ::
46 NC
Manufacturer ::
Toshiba
Model Number:
TK10J80E,S1E
Introduction
The TK10J80E,S1E,from Toshiba,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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