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IXFN20N120P
manufacturer:
IXYS
Description:
MOSFET 20 Amps 1200V 0.6 Rds
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Technology ::
Si
Id - Continuous Drain Current ::
20 A
Mounting Style ::
Chassis Mount
Tradename ::
Polar, HiPerFET
Minimum Operating Temperature ::
- 55 C
Package / Case ::
SOT-227-4
Maximum Operating Temperature ::
+ 150 C
Channel Mode ::
Enhancement
Vds - Drain-Source Breakdown Voltage ::
1200 V
Packaging ::
Tube
Vgs Th - Gate-Source Threshold Voltage ::
6.5 V
Product Category ::
MOSFET
Rds On - Drain-Source Resistance ::
570 MOhms
Number Of Channels ::
1 Channel
Vgs - Gate-Source Voltage ::
30 V
Qg - Gate Charge ::
193 NC
Manufacturer ::
IXYS
Model Number:
IXFN20N120P
Introduction
The IXFN20N120P,from IXYS,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
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|
IXTN660N04T4 |
MOSFET 40V/660A TrenchT4 Power MOSFET
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|
IXFR10N100Q |
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IXFX30N50Q |
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|
IXFK80N20Q |
MOSFET 80 Amps 200V 0.03 Rds
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|
|
|
IXFR70N15 |
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|
|
|
IXFH60N25Q |
MOSFET 60 Amps 250V 0.047 Rds
|
|
|
|
IXFR90N20 |
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|
IXFX180N085 |
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