2SB1366
Specifications
Product Category ::
MOSFET
Transistor Type ::
PNP
Installation Type ::
Through Hole
Operating Temperature ::
-55 ° C ~ 150 ° C (TJ)
Current - Collector Cutoff (Max) ::
100µA (ICBO)
Frequency - Transition ::
9MHz
Voltage - Collector Breakdown (maximum) ::
60V
Standard Packaging ::
1000
Current - Collector (Ic) (maximum) ::
3A
Vce Saturation Value (maximum) For Different Ib, Ic ::
1V @ 200mA, 2A
Power - Maximum ::
2W
DC Current Gain (hFE) At Different Ic, Vce (minimum) ::
60 @ 500mA, 5V
Package/shell ::
TO-220-3 Whole Package
Manufacturer ::
SANYO
Model Number:
2SB1366
Introduction
The 2SB1366,from SANYO,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
2SB826R |
Silicon PNP Power Transistors
|
|
|
|
2SA603 |
PNP SILICON EPITAXIAL TRANSISTOR
|
|
|
|
2SC2344 |
Silicon PNP Power Transistors
|
|
|
|
2SC2078 |
27MHz RF Power Amplifier Applications
|
|
|
|
2SB1142S |
Silicon PNP Power Transistors
|
|
|
|
2SC2230A |
Silicon NPN Triple Diffused Type (PCT Process)
|
|
|
|
2SA1348 |
Switching Applications(with Bias Resistance)
|
|
|
|
2SC3039 |
For Switching Regulators
|
|
|
|
2SC3175 |
NPN Epitaxial Planar Type Silicon Transistor
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2SA1011 |
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|
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