english
2SK2915
manufacturer:
Toshiba Semiconductor
Description:
Silicon N Channel MOS Type (π−MOSV)
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Product Category ::
MOSFET
Minimum Operating Temperature ::
- 55 C
Pd-power Dissipation ::
150 W
Typical On-delay Time ::
35 Ns
Fall Time ::
60 Ns
Vds-drain Source Breakdown Voltage ::
600 V
Manufacturer ::
Toshiba Semiconductor
Length ::
15.5 Mm
Configuration ::
Single
Vgs - Gate-Source Voltage ::
30 V
Rds On-drain Source On-resistance ::
400 MOhms
Rise Time ::
50 Ns
Number Of Channels ::
1 Channel
Typical Shutdown Delay Time ::
155 Ns
Height ::
20 Mm
Id-continuous Drain Current ::
16 A
Installation Style ::
Through Hole
Maximum Operating Temperature ::
+ 150 C
Channel Mode ::
Enhancement
Technology ::
Si
Width ::
4.5 Mm
Model Number:
2SK2915
Introduction
The 2SK2915,from Toshiba Semiconductor,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Related Products
2SK2837
Silicon N Channel MOS Type (π−MOSV)
2SK2382
MOSFET 220NIS2 PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(10-01)/OBSOLETE(10-04),
2SA1316
TRANSISTOR (FOR LOW NOISE AUDIO AMPLIFIER, RECOMMENDED FOR THE FIRST STAGES OF MC GEAD AMPLIFIERS)
2SA1387
Silicon PNP Power Transistors
2SK2545
MOSFET 220NIS2 PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(10-01)/OBSOLETE(10-04),
2SC1815GR
Bipolar Transistors - BJT TO-92 PLN(LF),DISCON(07-10)/PHASE-OUT(10-04)/OBSOLETE(10-07),
2SA950-O
Bipolar Transistors - BJT TO-92 PLN(LF),DISCON(07-10)/PHASE-OUT(10-04)/OBSOLETE(10-07),
2SK1865
TRANSISTOR 12 A, 500 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220FL, TO-220FL, 3 PIN, FET General Purpose Power
2SC3180N
TRANSISTOR 6 A, 80 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
2SK2750
MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OBSOLETE(11-04),
| Image | Part # | Description | |
|---|---|---|---|
|
|
2SK2837 |
Silicon N Channel MOS Type (π−MOSV)
|
|
|
|
2SK2382 |
MOSFET 220NIS2 PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(10-01)/OBSOLETE(10-04),
|
|
|
|
2SA1316 |
TRANSISTOR (FOR LOW NOISE AUDIO AMPLIFIER, RECOMMENDED FOR THE FIRST STAGES OF MC GEAD AMPLIFIERS)
|
|
|
|
2SA1387 |
Silicon PNP Power Transistors
|
|
|
|
2SK2545 |
MOSFET 220NIS2 PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(10-01)/OBSOLETE(10-04),
|
|
|
|
2SC1815GR |
Bipolar Transistors - BJT TO-92 PLN(LF),DISCON(07-10)/PHASE-OUT(10-04)/OBSOLETE(10-07),
|
|
|
|
2SA950-O |
Bipolar Transistors - BJT TO-92 PLN(LF),DISCON(07-10)/PHASE-OUT(10-04)/OBSOLETE(10-07),
|
|
|
|
2SK1865 |
TRANSISTOR 12 A, 500 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220FL, TO-220FL, 3 PIN, FET General Purpose Power
|
|
|
|
2SC3180N |
TRANSISTOR 6 A, 80 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
|
|
|
|
2SK2750 |
MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OBSOLETE(11-04),
|
Send RFQ
Stock:
MOQ: