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Home > products > Semiconductors > IPB80N06S4L05ATMA1

IPB80N06S4L05ATMA1

manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS-T2
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Technology ::
Si
Id - Continuous Drain Current ::
80 A
Mounting Style ::
SMD/SMT
Minimum Operating Temperature ::
- 55 C
Package / Case ::
TO-263-3
Maximum Operating Temperature ::
+ 175 C
Channel Mode ::
Enhancement
Vds - Drain-Source Breakdown Voltage ::
60 V
Packaging ::
Reel
Vgs Th - Gate-Source Threshold Voltage ::
1.2 V
Product Category ::
MOSFET
Rds On - Drain-Source Resistance ::
3.9 MOhms
Number Of Channels ::
1 Channel
Vgs - Gate-Source Voltage ::
16 V
Qg - Gate Charge ::
110 NC
Manufacturer ::
Infineon Technologies
Introduction
The IPB80N06S4L05ATMA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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