IPD60R520C6BTMA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 600V 8.1A TO252
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
±20V
Current - Continuous Drain (Id) @ 25°C ::
8.1A (Tc)
@ Qty ::
0
FET Type ::
N-Channel
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
23.4nC @ 10V
Manufacturer ::
Infineon Technologies
Minimum Quantity ::
2500
Drive Voltage (Max Rds On, Min Rds On) ::
10V
Factory Stock ::
0
Operating Temperature ::
-55°C ~ 150°C (TJ)
FET Feature ::
-
Series ::
CoolMOS™
Input Capacitance (Ciss) (Max) @ Vds ::
512pF @ 100V
Supplier Device Package ::
PG-TO252-3
Packaging ::
Tape & Reel (TR)
Rds On (Max) @ Id, Vgs ::
520 MOhm @ 2.8A, 10V
Power Dissipation (Max) ::
66W (Tc)
Package / Case ::
TO-252-3, DPak (2 Leads + Tab), SC-63
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
3.5V @ 230µA
Drain To Source Voltage (Vdss) ::
600V
Introduction
The IPD60R520C6BTMA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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