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Home > products > Semiconductors > IRL6342PBF

IRL6342PBF

manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 30V 9.9A 8SOIC
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
±12V
Current - Continuous Drain (Id) @ 25°C ::
9.9A (Ta)
@ Qty ::
0
FET Type ::
N-Channel
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
11nC @ 4.5V
Manufacturer ::
Infineon Technologies
Minimum Quantity ::
3800
Drive Voltage (Max Rds On, Min Rds On) ::
2.5V, 4.5V
Factory Stock ::
0
Operating Temperature ::
-55°C ~ 150°C (TJ)
FET Feature ::
-
Series ::
HEXFET®
Input Capacitance (Ciss) (Max) @ Vds ::
1025pF @ 25V
Supplier Device Package ::
8-SO
Packaging ::
Tube
Rds On (Max) @ Id, Vgs ::
14.6 MOhm @ 9.9A, 4.5V
Power Dissipation (Max) ::
2.5W (Ta)
Package / Case ::
8-SOIC (0.154", 3.90mm Width)
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
1.1V @ 10µA
Drain To Source Voltage (Vdss) ::
30V
Introduction
The IRL6342PBF,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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