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IRFHM830DTR2PBF

manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 30V 20A PQFN
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
±20V
Current - Continuous Drain (Id) @ 25°C ::
20A (Ta), 40A (Tc)
@ Qty ::
0
FET Type ::
N-Channel
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
27nC @ 10V
Manufacturer ::
Infineon Technologies
Minimum Quantity ::
1
Drive Voltage (Max Rds On, Min Rds On) ::
4.5V, 10V
Factory Stock ::
0
Operating Temperature ::
-55°C ~ 150°C (TJ)
FET Feature ::
-
Series ::
HEXFET®
Input Capacitance (Ciss) (Max) @ Vds ::
1797pF @ 25V
Supplier Device Package ::
PQFN (3x3)
Part Status ::
Obsolete
Packaging ::
Cut Tape (CT)
Rds On (Max) @ Id, Vgs ::
4.3 MOhm @ 20A, 10V
Power Dissipation (Max) ::
2.8W (Ta), 37W (Tc)
Package / Case ::
8-VQFN Exposed Pad
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
2.35V @ 50µA
Drain To Source Voltage (Vdss) ::
30V
Introduction
The IRFHM830DTR2PBF,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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