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IRF6709S2TRPBF
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 25V 12A DIRECTFET-S1
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
±20V
Current - Continuous Drain (Id) @ 25°C ::
12A (Ta), 39A (Tc)
@ Qty ::
0
FET Type ::
N-Channel
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
12nC @ 4.5V
Manufacturer ::
Infineon Technologies
Minimum Quantity ::
4800
Drive Voltage (Max Rds On, Min Rds On) ::
4.5V, 10V
Factory Stock ::
0
Operating Temperature ::
-55°C ~ 175°C (TJ)
FET Feature ::
-
Series ::
HEXFET®
Input Capacitance (Ciss) (Max) @ Vds ::
1010pF @ 13V
Supplier Device Package ::
DIRECTFET S1
Part Status ::
Obsolete
Packaging ::
Tape & Reel (TR)
Rds On (Max) @ Id, Vgs ::
7.8 MOhm @ 12A, 10V
Power Dissipation (Max) ::
1.8W (Ta), 21W (Tc)
Package / Case ::
DirectFET™ Isometric S1
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
2.35V @ 25µA
Drain To Source Voltage (Vdss) ::
25V
Model Number:
IRF6709S2TRPBF
Introduction
The IRF6709S2TRPBF,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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