IPB12CNE8N G
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 85V 67A TO263-3
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
±20V
Current - Continuous Drain (Id) @ 25°C ::
67A (Tc)
@ Qty ::
0
FET Type ::
N-Channel
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
64nC @ 10V
Manufacturer ::
Infineon Technologies
Minimum Quantity ::
1000
Drive Voltage (Max Rds On, Min Rds On) ::
10V
Factory Stock ::
0
Operating Temperature ::
-55°C ~ 175°C (TJ)
FET Feature ::
-
Series ::
OptiMOS™
Input Capacitance (Ciss) (Max) @ Vds ::
4340pF @ 40V
Supplier Device Package ::
D²PAK (TO-263AB)
Part Status ::
Obsolete
Packaging ::
Tape & Reel (TR)
Rds On (Max) @ Id, Vgs ::
12.9 MOhm @ 67A, 10V
Power Dissipation (Max) ::
125W (Tc)
Package / Case ::
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
4V @ 83µA
Drain To Source Voltage (Vdss) ::
85V
Introduction
The IPB12CNE8N G,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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