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Home > products > Semiconductors > IRF7701GTRPBF

IRF7701GTRPBF

manufacturer:
Infineon Technologies
Description:
MOSFET P-CH 12V 10A 8-TSSOP
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
±8V
Current - Continuous Drain (Id) @ 25°C ::
10A (Ta)
@ Qty ::
0
FET Type ::
P-Channel
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
100nC @ 4.5V
Manufacturer ::
Infineon Technologies
Minimum Quantity ::
4000
Drive Voltage (Max Rds On, Min Rds On) ::
1.8V, 4.5V
Factory Stock ::
0
Operating Temperature ::
-55°C ~ 150°C (TJ)
FET Feature ::
-
Series ::
HEXFET®
Input Capacitance (Ciss) (Max) @ Vds ::
5050pF @ 10V
Supplier Device Package ::
8-TSSOP
Part Status ::
Obsolete
Packaging ::
Tape & Reel (TR)
Rds On (Max) @ Id, Vgs ::
11 MOhm @ 10A, 4.5V
Power Dissipation (Max) ::
1.5W (Ta)
Package / Case ::
8-TSSOP (0.173", 4.40mm Width)
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
1.2V @ 250µA
Drain To Source Voltage (Vdss) ::
12V
Introduction
The IRF7701GTRPBF,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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