IPSH4N03LA G
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 25V 90A IPAK
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
±20V
Current - Continuous Drain (Id) @ 25°C ::
90A (Tc)
@ Qty ::
0
FET Type ::
N-Channel
Mounting Type ::
Through Hole
Gate Charge (Qg) (Max) @ Vgs ::
26nC @ 5V
Manufacturer ::
Infineon Technologies
Minimum Quantity ::
1500
Drive Voltage (Max Rds On, Min Rds On) ::
4.5V, 10V
Factory Stock ::
0
Operating Temperature ::
-55°C ~ 175°C (TJ)
FET Feature ::
-
Series ::
OptiMOS™
Input Capacitance (Ciss) (Max) @ Vds ::
3200pF @ 15V
Supplier Device Package ::
PG-TO251-3
Part Status ::
Obsolete
Packaging ::
Tube
Rds On (Max) @ Id, Vgs ::
4.4 MOhm @ 60A, 10V
Power Dissipation (Max) ::
94W (Tc)
Package / Case ::
TO-251-3 Stub Leads, IPak
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
2V @ 40µA
Drain To Source Voltage (Vdss) ::
25V
Introduction
The IPSH4N03LA G,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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