IPB80N06S3-07
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 55V 80A D2PAK
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
±20V
Current - Continuous Drain (Id) @ 25°C ::
80A (Tc)
@ Qty ::
0
FET Type ::
N-Channel
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
170nC @ 10V
Manufacturer ::
Infineon Technologies
Minimum Quantity ::
1000
Drive Voltage (Max Rds On, Min Rds On) ::
10V
Factory Stock ::
0
Operating Temperature ::
-55°C ~ 175°C (TJ)
FET Feature ::
-
Series ::
OptiMOS™
Input Capacitance (Ciss) (Max) @ Vds ::
7768pF @ 25V
Supplier Device Package ::
PG-TO263-3-2
Part Status ::
Obsolete
Packaging ::
Tape & Reel (TR)
Rds On (Max) @ Id, Vgs ::
6.5 MOhm @ 51A, 10V
Power Dissipation (Max) ::
135W (Tc)
Package / Case ::
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
4V @ 80µA
Drain To Source Voltage (Vdss) ::
55V
Introduction
The IPB80N06S3-07,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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