IPB039N10N3GE8187ATMA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 100V 160A TO263-7
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
±20V
Current - Continuous Drain (Id) @ 25°C ::
160A (Tc)
@ Qty ::
0
FET Type ::
N-Channel
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
117nC @ 10V
Manufacturer ::
Infineon Technologies
Minimum Quantity ::
1000
Drive Voltage (Max Rds On, Min Rds On) ::
6V, 10V
Factory Stock ::
0
Operating Temperature ::
-55°C ~ 175°C (TJ)
FET Feature ::
-
Series ::
OptiMOS™
Input Capacitance (Ciss) (Max) @ Vds ::
8410pF @ 50V
Supplier Device Package ::
PG-TO263-7
Part Status ::
Active
Packaging ::
Tape & Reel (TR)
Rds On (Max) @ Id, Vgs ::
3.9 MOhm @ 100A, 10V
Power Dissipation (Max) ::
214W (Tc)
Package / Case ::
TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
3.5V @ 160µA
Drain To Source Voltage (Vdss) ::
100V
Introduction
The IPB039N10N3GE8187ATMA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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