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Home > products > Semiconductors > SISC050N10DX1SA1

SISC050N10DX1SA1

manufacturer:
Infineon Technologies
Description:
MOSFET N-CHAN SAWED WAFER
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
-
Current - Continuous Drain (Id) @ 25°C ::
-
@ Qty ::
0
FET Type ::
N-Channel
Mounting Type ::
-
Gate Charge (Qg) (Max) @ Vgs ::
-
Manufacturer ::
Infineon Technologies
Minimum Quantity ::
150640
Drive Voltage (Max Rds On, Min Rds On) ::
-
Factory Stock ::
0
Operating Temperature ::
-
FET Feature ::
-
Series ::
-
Input Capacitance (Ciss) (Max) @ Vds ::
-
Supplier Device Package ::
-
Part Status ::
Active
Packaging ::
-
Rds On (Max) @ Id, Vgs ::
-
Power Dissipation (Max) ::
-
Package / Case ::
-
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
-
Drain To Source Voltage (Vdss) ::
-
Introduction
The SISC050N10DX1SA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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