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Home > Products > > IPS80R1K4P7AKMA1

IPS80R1K4P7AKMA1

manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 800V 4A IPAK-SL
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
±20V
Current - Continuous Drain (Id) @ 25°C ::
4A (Tc)
@ Qty ::
0
FET Type ::
N-Channel
Mounting Type ::
Through Hole
Gate Charge (Qg) (Max) @ Vgs ::
10nC @ 10V
Manufacturer ::
Infineon Technologies
Minimum Quantity ::
1
Drive Voltage (Max Rds On, Min Rds On) ::
10V
Factory Stock ::
0
Operating Temperature ::
-55°C ~ 150°C (TJ)
FET Feature ::
Super Junction
Series ::
CoolMOS™
Input Capacitance (Ciss) (Max) @ Vds ::
-
Supplier Device Package ::
PG-TO251-3
Part Status ::
Active
Packaging ::
Tube
Rds On (Max) @ Id, Vgs ::
1.4 Ohm @ 1.4A, 10V
Power Dissipation (Max) ::
32W (Tc)
Package / Case ::
TO-251-3 Stub Leads, IPak
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
3.5V @ 700µA
Drain To Source Voltage (Vdss) ::
800V
Model Number:
IPS80R1K4P7AKMA1
Introduction
The IPS80R1K4P7AKMA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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