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Home > products > Semiconductors > STB4NK60Z-1

STB4NK60Z-1

manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 600V 4A I2PAK
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
±30V
Current - Continuous Drain (Id) @ 25°C ::
4A (Tc)
@ Qty ::
0
FET Type ::
N-Channel
Mounting Type ::
Through Hole
Gate Charge (Qg) (Max) @ Vgs ::
26nC @ 10V
Manufacturer ::
STMicroelectronics
Minimum Quantity ::
1
Drive Voltage (Max Rds On, Min Rds On) ::
10V
Factory Stock ::
0
Operating Temperature ::
150°C (TJ)
FET Feature ::
-
Series ::
SuperMESH™
Input Capacitance (Ciss) (Max) @ Vds ::
510pF @ 25V
Supplier Device Package ::
I2PAK
Part Status ::
Not For New Designs
Packaging ::
Tube
Rds On (Max) @ Id, Vgs ::
2 Ohm @ 2A, 10V
Power Dissipation (Max) ::
70W (Tc)
Package / Case ::
TO-262-3 Long Leads, I²Pak, TO-262AA
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
4.5V @ 50µA
Drain To Source Voltage (Vdss) ::
600V
Introduction
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